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Extra info for A Possible Way to Discuss the Fundamental Principles of Relativity
Zeks: Ferroelectrics 134, 313 (1992) 3  D. Tilly: Ferroelectric Ceramics (Birkh¨ auser, Basel 1993) p. 163 3  D. Tilley: Ferroelectric Thin Films (Gordon and Breach, Amsterdam 1996) p. 12 3, 6, 20  Y. Ishibashi, H. Orihara, D. Tilley: J. Phys. Soc. Jpn. 67, 3292 (1998) 3  E. K. Tan, J. Osman, D. Tilley: Solid State Commun. 116, 61 (2000) 3, 20  E. K. Tan, J. Osman, D. Tilley: Solid State Commun. 117, 59 (2001) 3, 20  L. H. Ong, J. Osman, D. Tilley: Phys. Rev. B 63, 144109 (2001) 3, 19  Y.
9 µC/cm2, respectively, at an applied voltage of 5 V. This Chemical Solution Deposition 37 Fig. 7. , exothermic) can be explained by both the change of the TiO6 octahedra in the structure and the crystal orientation of the synthesized ﬁlms. Ferroelectricity is known to be based upon the displacement of an atom from its original position along one axis. The substitution of A-site ions in the Bi4 Ti3 O12 structure by rare earth ions with a smaller ionic radius promotes the rotation of TiO6 octahedra in the a–b plane, accompanied by a tilt of the octahedra along the c-axis .
References       J. Scott, C. A. Araujo: Science 246, 1400 (1989) 3 J. Scott: Ferroelectr. Rev. 1, 1 (1998) 3 J. Scott: Ferroelectric Memories (Springer, Berlin 2000) 3, 16 R. Kretschmer, K. Binder: Phys. Rev. B 20, 1065 (1979) 3, 20 D. Tilley, B. Zeks: Solid State Commun. 49, 823 (1984) 3 D. Tilley: Solid State Commun. 65, 657 (1988) 3 Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films 21  D. Tilley, B. Zeks: Ferroelectrics 134, 313 (1992) 3  D. Tilly: Ferroelectric Ceramics (Birkh¨ auser, Basel 1993) p.